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60051 20A10 HM612 TLSH180P 0RPLS 21PA1 1A66C HM612
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  smd type ic smd type transistors HN1C07F 1pinmark unit: mm features excellent current gain(h fe )linearity :h fe =25(min) at v ce =6v,i c =400ma absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5v collector current i c 500 ma base current i b 50 ma power dissipation p d 300 mw junction temperature t j 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb = 50v, i e =0 0.1 a emitter cutoff current i ebo v eb =5v,i c =0 0.1 a v ce =1v,i c = 100ma 70 240 v ce =6v,i c = 400ma 25 collector-emitter saturation voltage * v ce(sat) i c = 100ma, i b = 10ma 0.1 0.25 v base emitter voltage * v be v ce =1v,i c = 100ma 0.8 1.0 v output capacitance c ob v ce =6v,i e =0,f=1mhz 7 pf transition frequency f t v ce =6v,i e = 20ma 300 mhz *. pw 350s,duty cycle 2% dc current gain * h fe sales@twtysemi.com 1 of 1 http://www.twtysemi.com s m d ty p e t r a n s i s t o r s s m d ty p e i c s m d ty p e t r a n s i s t o r s s m d ty p e d i o d e s smd type transistors smd type transistors smd type transistors product specification 4008-318-123


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